Dark conduction mechanisms of PTQBDT based heterojunction diode

Date

2023-01-01

Author

Gullu, H. H.
Yildiz, D. E.
Hacioglu, S. O.
Çırpan, Ali
Toppare, Levent Kamil

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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Al:LiF/PTQBT:PCBM/PEDOT:PSS/ITO/glass organic-based diode is fabricated with different weight ratios in PTQBT:PCBM active layer. The diodes D1, D2 and D3 are prepared using the precursor solution for spin coating process as 1:2, 1:3 and 1:4, respectively. Under dark, main diode parameters are extracted by conventional thermionic emission theory using the results of measurements. Parasitic resistance contribution, non-ideal barrier height formation and high values of ideality factor indicate possible effects of space charge limited current flow mechanism on forward biased characteristics. At saturated voltage region, series resistances are calculated and the results are evaluated according to Cheung's method. The possible voltage sharing between interface layer and depletion region are also investigated by analysis of density of interface states. In addition, field effect is found in a major role on the reverse current flow and the mechanism is evaluated according to Schottky-Richardson model.

Subject Keywords

polymer, thin film, spin-coating, heterojunction, elektrical characterization, SCHOTTKY-BARRIER DIODES, CURRENT-VOLTAGE, SERIES RESISTANCE, POOLE-FRENKEL, CURRENT TRANSPORT, INSULATOR LAYER, I-V, SI, PARAMETERS, POLYMERS

URI

https://hdl.handle.net/11511/101584

Journal

PHYSICA SCRIPTA

DOI

https://doi.org/10.1088/1402-4896/aca727

Collections

Department of Chemistry, Article

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Citation Formats

H. H. Gullu, D. E. Yildiz, S. O. Hacioglu, A. Çırpan, and L. K. Toppare, “Dark conduction mechanisms of PTQBDT based heterojunction diode,” PHYSICA SCRIPTA, vol. 98, no. 1, pp. 0–0, 2023, Accessed: 00, 2023. [Online]. Available: https://hdl.handle.net/11511/101584.