Current-mode wired logic circuit technique in CMOS technology

Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2013-02-05) Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c*) and perpendicular (E perpendicular to c*) to optical axis c*. The measurements were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transition...
Column level two-step multi-slope analog to digital converter for CMOS image sensors Tunca, Can; Koçer, Fatih; Department of Electrical and Electronics Engineering (2017) In the past few years, CMOS image sensors has performed an enormous growth in technology and their market is broadened with the integration cameras on the cell phones. The advancement trend continues as the pixel sizes getting smaller and the array formats getting larger. With pixels decreasing in size and growing in numbers, faster row read-out speed requirements have emerged to keep frame rates constant. Column parallel ADC architectures meet these demands as they utilize large numbers of parallel convers...
Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals Hasanlı, Nızamı (2011-01-01) The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispe...
Localized orbital description of electronic band structures, alloys, vacancies in semiconductors. Erbarut, Erkan; Tomak, Mehmet; Department of Physics (1986)
Impurities in semiconductors. Tuncay, Çağlar; Tomak, Mehmet; Department of Physics (1984)

Citation Formats

İ. E. Ungan, “Current-mode wired logic circuit technique in CMOS technology,” Ph.D. - Doctoral Program, Middle East Technical University, 1996.