Optimization of nickel seed layer for perc plating metallization

Date

2023-9-05

Author

Korkmaz Arslan, Melisa

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One of the significant contributors to the costs of solar cell fabrication lies in the metallization process. Escalating prices of silver for front-side metal contacts have presented challenges to cost-effective production. To address this, alternative, costefficient metal contacts with compatible performance have gained momentum. This study proposes Ni/Cu/Ag plated metal contacts as a viable alternative for front-side metalization of solar cells. Incorporating a Ni seed layer is pivotal as a barrier, effectively eliminating the diffusion of Cu. A paramount objective is establishing a uniform and effective Ni seed layer regarding low contact resistivity. Sequentially, Ni seed layer formation is followed by the deposition of a Cu conductive layer and an Ag capping layer. These strategic steps collectively aim to provide a front metal contact for industrially feasible Passivated Emitter Rear Cell (PERC) cell production. The resultant samples exhibit a low contact resistivity comparable to the standard screen-printed Ag metallization approach. Consequently, with optimized Ni seed layer deposition and annealing parameters, contact resistance ofapproximately 8 mΩ/cm is achieved for Ni/Cu/Ag plated PERC solar cells, accompanied by an efficiency level of >16% by pilot scale industrial production approach.

Subject Keywords

Plated Ni/Cu/Ag, Bias-assisted/light-induced plating, Laser ablation, PERC, Ni seed layer

URI

https://hdl.handle.net/11511/105580

Collections

Graduate School of Natural and Applied Sciences, Thesis