Sintering and electrical properties of the calcium and cobalt doped yttrium chromite ceramics

Başçeri, Cem


Sintering and humidity-sensitive behaviour of the ZnCr2O4-K2CrO4 ceramic system
Bayhan, M; Hashemi, T; Brinkman, AW (Springer Science and Business Media LLC, 1997-12-15)
Solid state reaction at elevated temperatures and the sintering behaviour of zinc chromite formed by zinc oxide and chromite oxide were investigated. Crystalline structure, surface and fractured morphologies and humidity-sensitivity characteristics of ZnCr2O4-K2CrO4-CuO were studied. The fired ceramic body, which proved to be mainly constructed from ZnCr2O4 spinel grains, was porous. The humidity characteristics of the sensor showed that the resistance decreased as a logarithmic function with an increase in...
Sintering studies on Cu-Al-Ni powder mixtures.
Bağdu, Ceren; Ögel, Bilgehan; Department of Metallurgical and Materials Engineering (2002)
Diametral strength testing of hydroxyapatites doped with yttrium and fluoride
Evis, Zafer; Sun, Z. P. (2010-10-01)
This study aimed to investigate the diametral strength testing of hydroxyapatite (HA) doped with Y and fluoride with different compositions. Hydroxyapatites were synthesised by precipitation method and sintered at 900, 1100 and 1300 degrees C for 1 h. High amounts of doping caused a decrease in relative densities of HAs. Higher sintering temperatures helped in increasing the relative densities. No second phases were observed by X-ray diffraction spectra of 2.5 mol.-%Y and 2.5 mol.-%F doped HA after the sint...
Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor
ANUTGAN, TAMİLA; ANUTGAN, MUSTAFA; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2011-03-31)
The capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) cur...
Conductivity and mobility studies on recrystallized CdS thin films.
Mamıkoğlu, Habibe; Department of Physics (1987)
Citation Formats
C. Başçeri, “Sintering and electrical properties of the calcium and cobalt doped yttrium chromite ceramics,” Middle East Technical University, 1994.