Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Wafer level packaging of MEMS devices using microalloyed lead-free solders
Download
10603438.pdf
Date
2023-12
Author
Sevinç, Mertcan
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
379
views
1212
downloads
Cite This
The growing popularity of MEMS devices makes packaging methods and processes essential. The need for packaging and lower costs push wafer-level packaging to be more appealing for several applications such as microbolometers, resonators, and micromirrors. Cu-In-Sn gains attraction among various wafer-level packaging methods. due to its low bonding temperature compared to other transient liquid phase bonding systems. Ternary alloy allows improvement upon the lacking aspects of binary TLP bonding. Bonding at temperatures below 200°C becomes possible with the combination of In-Sn. Reducing the thermal stress and combining with low temperature bonding makes Cu-In-Sn system suitable candidate for CMOS packaging. In this regard, the applicability of the system was studied in this thesis for wafer-level packaging. Throughout this study, the possibility of Cu-In-Sn bonding has been examined in detail. Bonding methods showed promising results. Sputtered Cu and thermally evaporated Sn and In layers were used on both device and cap wafers. Bonding attempts at 200°C and 250°C yielded inadequate outcomes. Examination after annealing revealed that sluggish diffusion due to incorrect processing parameters were the reason, such as bonding temperature. Process optimizations were performed and the resulting mechanical properties and final melting temperatures of wafers bonded between 200-350°C were investigated in detail. Bonds that have melting temperatures up to and higher than 550°C were obtained with bonding procedures that take place at 250°C and 350°C. It was observed that bonding at higher temperatures yielded higher mechanical strength. An average shear strength of 19.1 MPa was obtained when processed at 350°C and an average shear strength of 8.5°C was obtained with a processing temperature of 250°C.
Subject Keywords
Wafer-level packaging
,
Cu-In-Sn ternary alloy
,
MEMS packaging
,
TLP bonding
,
SLID bonding
URI
https://hdl.handle.net/11511/107720
Collections
Graduate School of Natural and Applied Sciences, Thesis
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Sevinç, “Wafer level packaging of MEMS devices using microalloyed lead-free solders,” M.S. - Master of Science, Middle East Technical University, 2023.