Crystallization of amorphous selenium thin films.

1986
Kalebozan, Halit

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Crystallization of amorphous selenium thin films
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The crystallization of amorphous Se (a-Se) films prepared by vacuum deposition at <10-5 Torr onto glass substrates at 20°C was examined. The amorphous-to-crystalline transition was obtained by annealing of the films between 40–90°C. The crystalline structures resulting from annealing at different temperatures have been identified by SEM (Scanning Electron Microscope). X-ray and TEM (Transmission Electron Microscopy) studies showed that these structures were hexagonal. The thicknesses of the films used were ...
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A nanosecond pulsed, Ytterbium doped optical fiber laser, operating at 1064 nm, has been used for laser induced crystallization (LIC) of a standard recipe-hydrogenated amorphous silicon (a-Si: H) thin film, deposited in a radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) reactor. Despite relatively lower photon energy of 1.165 eV, the crystallization of the a-Si: H sample with the Tauc gap of 1.70 eV was succeeded. The optical energy density impinging on the sample surface was adjusted by...
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Silicon nanocrystals (NCs) imbedded in a matrix of silicon oxide have drawn much attention due to their applications in optoelectronic devices and third-generation solar cells. Several methods were reported for the fabrication of Si NCs. Among these techniques, there are aerosol synthesis, chemical vapor deposition, ion implantation, magnetron sputtering and thermal evaporation. However, electron beam evaporation is a straightforward and effective technique for the fabrication of silicon oxide thin films si...
Citation Formats
H. Kalebozan, “Crystallization of amorphous selenium thin films.,” Middle East Technical University, 1986.