Circuit design and technology evaluation of front-end RFIC’s for wireless communication

Date

2024-9-03

Author

İnce, Yağız Mahmut

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With the explosive demand for wireless-capable devices supporting a variety of data types such as audio, graphics, and video, the expectations for wireless communication technologies are increasing. Current bulk-CMOS technologies are insufficient for the evolving needs of front-end wireless communication systems, leading to a shift from discrete components to integrated circuits (ICs). III-V semiconductor technologies, such as the GaAs process, are favored in radio frequency integrated circuits (RFICs) due to their superior electron mobility, isolation, and noise characteristics, as well as higher carrier mobilities and transition frequencies (fT). These advantages make GaAs circuitry ideal for wideband high-performance wireless communication systems. However, RF SOI CMOS has recently emerged as a potential challenger to GaAs, offering significant RF performance improvements over bulk-CMOS, such as higher fT and better isolation, while retaining CMOS advantages. This master thesis conducts a comparative analysis of receivers in front-end wireless communication devices, such as low noise amplifiers (LNAs) and RF switches, between GaAs and RF SOI CMOS technologies. The objective is to evaluate the potential of RF SOI CMOS to replace GaAs in wideband high-performance communication systems, thereby enabling SoC solutions for high-performance wireless systems.

Subject Keywords

GaAs pHEMT, RF SOI CMOS, RF Switch, Low Noise Amplifier (LNA)

URI

https://hdl.handle.net/11511/111056

Collections

Graduate School of Natural and Applied Sciences, Thesis