Ion Implantation for Homogeneous and Selective Emitter Formation on Single Crystal Solar Cells

Date

2024-9-06

Author

Büyükgüzel, Mustafa

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Ion implantation offers significant advantages in the production of crystalline silicon-based solar cells, notably through its capability for single-sided doping. This technique enables the precise creation of both boron and phosphorus emitters, allowing for meticulous control over dopant concentration and junction depth, eliminating the need for Phosphosilicate Glass (PSG), Borosilicate Glass (BSG), or Boron Rich Layer (BRL) removal. Additionally, ion implantation facilitates the straightforward formation of selective emitter structures with high precision. In this study, we investigate the ion implantation parameters for fabricating both p-type and n-type emitter structures. Furthermore, we produce PERC (Passivated Emitter Rear Cell) solar cells with selective emitters via ion implantation and compare the performance with those produced using the thermal diffusion process. Our results demonstrate that ion implantation can create selective emitter regions with better uniformity and similar efficiency when compared with the thermal diffusion process, showcasing its potential for enhancing solar cell performance.

Subject Keywords

Ion Implantation, Selective Emitter, PERC

URI

https://hdl.handle.net/11511/111480

Collections

Graduate School of Natural and Applied Sciences, Thesis