EFFECT OF DEEP-LEVEL DEFECTS ON THE PERFORMANCE OF CDZNTESE DETECTORS

Date

2024-9

Author

Karaman, Mehmet Can

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CdZnTe-based radiation detectors are highly promising due to their high density, low leakage current, and superior gamma absorption owing to their high atomic number. However, growing large, homogeneous, defect-free single crystals of CdZnTe remains challenging. These detectors exhibit poor hole transport properties, affecting their overall performance. Incorporating Selenium (Se) into CdZnTe detectors (resulting in CdZnTeSe) has been shown to reduce electrical defects and enhance detector performance. A key factor in improving detector performance is understanding the impact of deep level defects. This thesis focuses on characterizing deep-level defects in CdZnTe and CdZnTeSe detectors and evaluates their performance through mobility-lifetime product measurements and resistivity. Defects are identified using the Photo-Induced Current Transient Spectroscopy (PICTS) technique, while Thermally Stimulated Current (TSC) and Thermally Stimulated Emission Spectroscopy (TEES) techniques provide additional information on defect states. Finally, the performance of these detectors is measured through gamma-ray performance evaluations and detailed mobility-lifetime measurements.

Subject Keywords

CdZnTe, CdZnTeSe, PICTS, TEES, TSC

URI

https://hdl.handle.net/11511/111483

Collections

Graduate School of Natural and Applied Sciences, Thesis