Electronic and Optical Insights into NaBi(WO₄)₂: A Promising Candidate for Optoelectronic Applications

Date

2025-03-19

Author

Isik, Mehmet
ALTUNTAŞ, GÖZDE
Hasanlı, Nızamı

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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This study provides an in-depth exploration of the electronic and optical properties of NaBi(WO4)2 crystal, with a focus on its potential applications in optoelectronic technologies. Absorbance measurements revealed a bandgap energy of 3.45 eV, highlighting the crystal's suitability for ultraviolet-visible light interactions. Thermally stimulated current (TSC) analysis uncovered a hole defect center, offering insights into charge trapping and transport mechanisms within the crystal. A prominent TSC peak was observed around 194 K, corresponding to a trap activation energy of 0.32 eV. Photoluminescence (PL) spectra displayed multiple emission peaks in the ultraviolet, blue, and green regions, emphasizing the crystal's ability to emit across a broad spectrum. These findings reveals the band structure and defect dynamics of NaBi(WO4)2, establishing its promise for advanced optoelectronic applications, particularly in blue and green light-emitting devices.

URI

https://hdl.handle.net/11511/114388

Collections

Department of Physics, Article