Nanosecond IR Laser-Assisted Selective 3D Etching of Silicon for Photovoltaics

Date

2025-01-01

Author

Akhtaryarazar, Darya
Kadan, Viktor
Dadashi, Khalil
Demirbas, Kardelen
Bek, Alpan
Borra, Mona Zolfaghari
Arıkan, Bülent
GOODARZİ, ARİAN
Turan, Raşit
Pavlov, Ihor

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Selective etching of laser-modified silicon (Si) enables 3D micro-sculpturing, offering new opportunities for photovoltaic (PV) applications. This technique facilitates high-aspect-ratio microstructures for light trapping in solar cells, photon management in photodetectors, and MEMS fabrication. We optimize selective wet-chemical etching of crystalline silicon (c-Si) modified by an infrared (IR) nanosecond (ns) laser, achieving high selectivity and controlled etching rates [1]. Additionally, we ensure complete removal of defected regions, producing a smooth, damage-free surface, crucial for PV applications requiring long carrier lifetimes.

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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105016198318&origin=inward
https://hdl.handle.net/11511/115856

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Department of Physics, Conference / Seminar