DEVELOPMENT AND APPLICATION OF NOVEL METAL OXIDE FOR HIGH-EFFICIENCY SILICON SOLAR CELLS

Date

2025-8-26

Author

Altıner, Gökhan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

190
views

0
downloads

Cite This

This thesis investigates the development and application of two novel metal oxide-based passivating contacts designed to minimize carrier recombination and resistive losses in high-efficiency silicon solar cells. Hydrogenated Aluminum-doped Zinc Oxide (AZO:H) was developed via spatial atomic layer deposition (ALD) as a transparent, electron-selective contact for Tunnel Oxide Passivated Contact (TOPCon) solar cells. Molybdenum Oxide (MoOx) was developed via thermal evaporation as a hole-selective contact for Passivated Emitter and Rear Contact (PERC) solar cells. The passivation quality of an optimized AZO:H/AlOx stack on n-type poly-Si was exceptional, yielding an iVoc of 728 mV and a J0 of 7.5 fA/cm² after a commercially viable N2 anneal. Concurrently, the successful integration of MoOx into an industrial PERC process flow was demonstrated. A champion power conversion efficiency of 21.53% was realized for a large-area industrial Cz p-type cell featuring an optimized 5 nm local MoOx/Ag back contact. This performance was driven by a high fill factor of 80.66% and a Voc of 672.3 mV, validating the contact's effectiveness. These findings demonstrate the high potential of both AZO:H and MoOx as effective, low-temperature processed passivating contacts, offering distinct and promising pathways to enhance the performance of next-generation crystalline silicon solar cell architectures.

Subject Keywords

Passivating Contacts, Photovoltaics, Transparent Conductive Oxides, Solar Cells

URI

https://hdl.handle.net/11511/116170

Collections

Graduate School of Natural and Applied Sciences, Thesis