Study of the effect of ionizing γ-radiation on the structural and vibrational properties of GaS and Yb-doped GaS (GaSYb) single crystals by X-ray diffraction (XRD) and Raman spectroscopy

Date

2026-03-01

Author

Madatov, R. S.
Turan, Raşit
Tagiev, T. B.
Sedani, Salar H.
Khaligzadeh, A. Sh
Genc, A. M.
Gulen, E.
Mamishova, R. M.

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This study investigates the effects of gamma irradiation on the structural and vibrational properties of GaS and Yb-doped GaS (GaSYb) single crystals. X-ray diffraction (XRD) analysis reveals that irradiation induces sulfur vacancies and gallium interstitials in GaS, leading to lattice contraction, increased microstrain, and reduced crystallinity. Raman spectroscopy confirms these modifications, showing phonon frequency shifts, peak broadening, and intensity reduction due to increased phonon scattering. In contrast, Yb incorporation enhances structural stability by strengthening Ga-S bonds, reducing defect formation, and mitigating radiation-induced amorphization. These findings demonstrate that Yb doping improves the radiation resistance of GaS, making it a promising material for applications in radiation-intensive environments.

URI

https://hdl.handle.net/11511/118051

Collections

Department of Physics, Article