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Date

2026-2-26

Author

Akça, Esin

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The main purpose of this study was to investigate effects of 10, 20, 40 wt% micron-sized particles (aluminum nitride, aluminum oxide, silicon nitride, silicon oxide) on the thermal performance of epoxy resin used in microelectronic devices. Specimens were produced via solution mixing technique followed by molding and curing. Although there were slight differences between each particle used, various thermal analyses conducted revealed that increasing the amount of all particles improved the thermal performance of the epoxy resin more significantly. The most significant property influencing thermal performance of these devices would be Thermal Conductivity (λ). Because heat development during operation should be released via heat diffusion which requires certain level of λ . In this study, use of 40 wt% particles increased the Thermal Conductivity (λ) of neat epoxy (0.15 W/m. K) more than 3 times. Another significant problem during operation of these devices would be formation of “thermal strain mismatch” due to the different values of Thermal Expansion Coefficient (α) of each material used in the device that might lead to loss of dimensional stability and malfunctioning. In this study, use of 40 wt.% particles decreased the thermal expansion coefficient of epoxy (49x10-6/K) down to 28x10-6/K, i.e. a decrease of -43%. Thermal performance also depends on the Glass Transition Temperature (Tg) values. In this study, use of 40 wt% particles increased Tg of neat epoxy (51°C) to 68°C, i.e. an increase of 17°C. Similarly, use of 40 wt% particles increased the Thermal Degradation Temperature (Td) of neat epoxy (324°C) to 356°C; i.e. an increase of 32°C. Moreover, it was also revealed that, there was no decrease in the lap shear adhesion strength of the neat epoxy resin after the incorporation of all particles. Additionally, these particles also increased mechanical rigidity of neat epoxy in terms of Storage Modulus at 25°C and 50°C.

Subject Keywords

Epoxy resin; aluminum nitride; aluminum oxide; silicon nitride; silicon oxide; thermal behaviour; microelectronic devices.

URI

https://hdl.handle.net/11511/119049

Collections

Graduate School of Natural and Applied Sciences, Thesis