Negative photoconductivity and infrared quenching effects in rare-earth-doped n-InSe

Date

2026-06-16

Author

Abdinov, A. Sh.
BABAYEVA, RƏNA
Hasanlı, Nızamı
Naghiyev, T. G.

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The features of negative photoconductivity (NPhC), background illumination-induced impurity photoconductivity (IIP), and optical quenching of intrinsic photoconductivity in pure and rare-earth elements (REEs)-doped n-InSe crystals were studied in order to identify new possibilities for practical application in optoelectronics. At low concentrations (N-REE and n-InSe ). This selection of materials enables a comparative analysis of the experimental results to determine the dependence of the observed photoelectric phenomena on both the concentration and the chemical nature of the REE dopant. Based on a comprehensive set of experimental studies, the feasibility of developing highly sensitive, next-generation tandem infrared (IR) photodetectors has been demonstrated. These detectors, based on n-InSe and n-InSe crystals with REE concentrations in the range 5 & sdot; 10(-2 )<= N <= 10(-1 )at.%, operate effectively within the optical spectral ranges of 1.20-1.90 mu m and 2.00-3.60 mu m.

URI

https://hdl.handle.net/11511/119641

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Department of Physics, Article