Thermal stability and decomposition behavior of layered Gallium Selenide (GaSe): implications for high-temperature applications

Date

2026-09-01

Author

Isik, M.
ALTUNTAŞ, GÖZDE
Hasanlı, Nızamı

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GaSe is a promising layered semiconductor due to its strong optoelectronic response, and potential for next-generation device technologies. In this study, structural and thermal behavior of powdered GaSe crystal was investigated by XRD, TGA, and DSC analyses. XRD results confirmed the hexagonal crystalline phase. TGA curve showed excellent thermal stability from room temperature to about 543 C, with approximately 0.74% mass loss in this range. Between 543 and 770 C, a slight mass gain of about 0.35% was observed, which was attributed to high-temperature oxidation of GaSe and the formation of GaO. The mass-loss region was further analyzed to determine the activation energies of the degradation-related processes. The activation energies of the thermally induced processes observed in both TGA and DSC curves were determined. DSC measurements revealed exothermic events, supporting thermally activated oxidation-related processes. These thermal parameters highlight the practical relevance of GaSe for high-temperature photodetectors and flexible optoelectronic devices.

Subject Keywords

2D Materials, Differential scanning calorimetry, Layered semiconductor, Optoelectronic Applications, Thermal stability, Thermogravimetric analysis

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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105048824998&origin=inward
https://hdl.handle.net/11511/120920

Collections

Department of Physics, Article