Indium antimonide infrared p-i-n photodetectors grown on galium arsenide coated silicon substrates by molecular beam epitaxy

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1999

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Tevke, Ahmet

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https://hdl.handle.net/11511/1889

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Graduate School of Natural and Applied Sciences, Thesis

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Citation Formats

A. Tevke, “Indium antimonide infrared p-i-n photodetectors grown on galium arsenide coated silicon substrates by molecular beam epitaxy,” Middle East Technical University, 1999.