Electrical characterization of electron selective titanium dioxide and hole selective molybdenum trioxide heterocontacts on crystalline silicon

Ahiboz, Doğuşcan
Transition metal oxides are promising materials as an alternative to the conventional charge transport layers in photovoltaic solar cells with the advantages of carrier selectivity and low processing temperatures. In this study, electronic properties of the hole transporting – electron blocking layer (HT-EBL) of sub-stoichiometric Molybdenum (III) Oxide (MoO3-x) and electron transporting – hole blocking layer (ET-HBL) of Titanium (II) Oxide (TiO2-x) were studied. For this purpose, carrier selective metal oxide layers with different thickness and deposition conditions were deposited over n-type and p-type crystalline silicon wafers in the structure of Metal-Oxide-Semiconductor (MOS) capacitor. Admittance analysis (capacitance and conductance methods) and current – voltage methods were employed for the characterization of the MOS capacitors. At the end of this study, best deposition condition and the metal oxide thickness for the most effective carrier transportation at the silicon – metal oxide interface and through the metal oxide layer were determined.