Fabrication and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation doped field effect transistors

Download

093295.pdf

Date

2000

Author

Yalçın, Tolga

Metadata

Show full item record

Item Usage Stats

90
views

0
downloads

URI

https://hdl.handle.net/11511/2803

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Fabrication and investigation of extremely thin CdTe absorber layer solar cells Hosseını, Arezoo; Güllü, Hasan Hüseyin; Bayraklı, Özge; Parlak, Mehmet; Turan, Raşit; Erçelebi, Ayşe Çiğdem (null; 2016-10-02)
Fabrication and investigation of extremely thin CdTe absorber layer solar cells Hosseini, Arezoo; Erçelebi, Ayşe Çiğdem; Turan, Raşit; Department of Physics (2016) Extremely thin absorber layer (ETA) solar cells aim to combine the advantages of using very thin and cheaply produced absorber layer on nano structured substrates with stability of all-solid-state solar cells. This type of photovoltaic devices use a nano structured interpenetrating heterojunction of thin light-absorbing layer at the interface between an n- and p-type semiconductors. N-type nano structured TiO2 layer is deposited on a Transparent Conducting Oxide coated glass (TCO) substrate, following with ...
Fabrication and characterization of Si-PIN photodiodes Doganci, Emre; Kaya, Senol; Aktag, Aliekber; Duman, Elif Sarigul; Turan, Raşit; Karacali, Huseyin; Yilmaz, Ercan (The Scientific and Technological Research Council of Turkey, 2019-01-01) In this work, characteristics of silicon-based p(+) type, intrinsic (I), n(-) type (Si-PIN) photodiodes with active area of 3.5 x 3.5 mm(2), 5.0 x 5.0 mm(2), or 7.0 x 7.0 mm(2) and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NURDAM) of Bolu Abant izzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the ...
Fabrication and characterization of single crystalline silicon solar cells Es, Fırat; Turan, Raşit; Department of Physics (2010) The electricity generation using photovoltaic (PV) solar cells is the most viable and promising alternative to the fossil-fuel based technologies which are threatening world’s climate. PV cells directly convert solar energy into electrical power through an absorption process that takes place in a solid state device which is commonly fabricated using semiconductors. These devices can be employed for many years with almost no degradation and maintenance. PV technologies have been diversified in different dire...
Fabrication and characterization of carbon nanotube based supercapacitor electrodes Doğru, Itır Bakış; Ünalan, Hüsnü Emrah; Turan, Raşit; Department of Micro and Nanotechnology (2016) Nanotechnology has started a new era where the nano-sized particles are manipulated. These nano-sized particles have lots of applications in a number of fields. Although carbon is one of the most abundant elements of the Earth or human body, in recent years it get an incredible perspective because of its nano-sized constructions like fullerene, graphene, graphite and carbon nanotubes. Carbon nanotubes are flawless cylinders consists of carbon where their radius are a few nanometers while their lengths are a...

Citation Formats

T. Yalçın, “Fabrication and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation doped field effect transistors,” Middle East Technical University, 2000.