İbrahim Günal

E-mail
gunal@metu.edu.tr
Department
Characterization of p-In2Se3 thin films
QASRAWİ, ATEF; Parlak, Mehmet; Ercelebi, C; Günal, İbrahim (2001-01-01)
Indium selenide thin films were deposited onto glass substrates kept at 150 degreesC by thermal evaporation of alpha -In2Se3. Some of the films were annealed at 150 degreesC and 200 degreesC and they all were found to exhi...
Structural and electrical properties of Cd doped InSe thin films
Qasrawi, AF; Günal, İbrahim; Ercelebi, C (Wiley, 2000-01-01)
Polycrystalline Cd doped InSe thin films were obtained by thermal co-evaporation of alpha -In2Se3 lumps and Cd onto glass substrates at a temperature of 150 degreesC. The films were annealed at 150 degrees and 200 degreesC...
Temperature effects on the properties of Ge thin films
Günal, İbrahim; Qasrawi, AF (1999-10-01)
The effects of substrate temperature (T-s) on the properties of vacuum evaporated p-type Ge thin films have been investigated for 25 < T-s < 400 degrees C. Increase in the substrate temperature improves the crystallinity a...
Structural and electrical characterization of Ag3Ga5Te9 and Ag3In5Se9 crystals
Parlak, Mehmet; Ercelebi, C; Günal, İbrahim; Ozkan, H; Hasanlı, Nızamı (Wiley, 1998-01-01)
X-ray powder diffraction studies revealed that Ag3Ga5Te9 and Ag3In5Se9 crystallize in orthorhombic and tetragonal systems. respectively. The temperature dependent conductivity and Hall effect measurements have been carried...
Current transport mechanisms in low resistive CdS thin films
Günal, İbrahim; Parlak, Mehmet (Springer Science and Business Media LLC, 1997-02-01)
The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed usi...
Crystal data, electrical resistivity and mobility in Cu3In5Se9 and Cu3In5Te9 single crystals
Parlak, Mehmet; Ercelebi, C; Günal, İbrahim; ÖZKAN, HÜSNÜ; Hasanlı, Nızamı; Culfaz, ALİ (1997-01-01)
X-ray powder diffraction data were obtained for Cu3In5Se9 and Cu3In5Te9 which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compou...
Anisotropy of electrical resistivity and hole mobility in InTe single crystals
Parlak, Mehmet; Ercelebi, C; Günal, İbrahim; ÖZKAN, HÜSNÜ; Hasanlı, Nızamı (Wiley, 1996-01-01)
The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain single crystals in parallel and perpendicular directions to c-axis have been investigated in the temperature range of 28-260 ...
Growth and characterization of polycrystalline InSe thin films
Parlak, Mehmet; Erçelebi, Ç.; Günal, İbrahim; SALAEVA, ZEYİT; ALLAKHVERDIEV, KERİM (1995-03-15)
Indium selenide films were obtained by the thermal evaporation of undoped crystals at substrate temperatures of 210 and 300 IC. Films were found to exhibit n-type conductivity. Scanning electron microscopy established that...
ON THE TEMPERATURE-DEPENDENCE OF THE INTERGRAIN BARRIERS IN POLYCRYSTALLINE CDS THIN-FILMS
Günal, İbrahim; MAMIKOGLU, H (1990-02-01)
The conduction mechanism in vacuum-evaporated CdS thin films with various indium doping levels is examined using temperature-dependent conductivity and Hall effect measurements. It was found that the predominating conducti...