On the description of the collision terms in three-valley hydrodynamic models for GaAs device modeling

Date

1994

Author

Beşikci, Cengiz

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A reduced set of transport parameters is proposed for the collision terms of the three-valley hydrodynamic model which is a faster alternative to ensemble Monte Carlo simulations. The predictions of the proposed model have been found to be in excellent agreement with transient ensemble Monte Carlo data. The reduction in the number of the transport parameters makes the model relatively easy to implement with substantial accuracy. The transport parameters which are of interest in semiclassical device modeling are presented as a function of electron energy.

Subject Keywords

Transport, Energy, Simulation, Mesfets

URI

https://hdl.handle.net/11511/28320

Journal

IEEE Transactions on Electron Devices

DOI

https://doi.org/10.1109/16.297747

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

C. Beşikci, “On the description of the collision terms in three-valley hydrodynamic models for GaAs device modeling,” IEEE Transactions on Electron Devices, pp. 1471–1475, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28320.