Serdar Kocaman

E-mail

skocaman@metu.edu.tr

Department

Department of Electrical and Electronics Engineering

ORCID

0000-0003-4850-7209

Scopus Author ID

24775972600

Web of Science Researcher ID

F-7582-2013

Isotropic gap formation, localization, and waveguiding in mesoscale Yukawa-potential amorphous structures Sarihan, Murat Can; Gövdeli, Alperen; Lan, Zhihao; Yilmaz, Yildirim Batuhan; Erdil, Mertcan; Wang, Yupei; Aras, Mehmet Sirin; Yanik, Cenk; Panoiu, Nicolae Coriolan; Wong, Chee Wei; Kocaman, Serdar (2024-12-01) Amorphous photonic structures are mesoscopic optical structures described by electrical permittivity distributions with underlying spatial randomness. They offer a unique platform for studying a broad set of electromagneti...
Rapid fabrication approach for active photonic devices by employing spin-on dopants Şahin, Alper; Akdeniz, Onur; Kocaman, Serdar (2024-08-01) Modulation based on the plasma dispersion effect can be achieved by controlling free carriers in the optical region with the aid of pn junction diodes. The embedded diodes are commonly realized with ion implantation, which...
On-chip electro-optic modulator based on left-handed photonic crystals Başay, Yalın; Akdeniz, Onur; Gövdeli, Alperen; Yanık, Cenk; Çelik, Süleyman; Kocaman, Serdar (2024-01-01) To achieve more compact integrated photonic devices, reducing size of elements is crucial. A factor that limits size-reduction is electro-optic components that require large optical interaction length. In this work, we des...
Spin-on Dopant Based Fabrication Methodology of Integrated Photonic Devices Şahin, Alper; Akdeniz, Onur; Kocaman, Serdar (2024-01-01) Sparse schedules associated with ion implantation impede the development of active optical devices. This study presents a process based on spin-on dopants that allows in-house fabrication of active devices.
Integrated programmable controlled phase gate design for quantum information processing Başay, Yalın; Kocaman, Serdar (2023-10-01) An integrated programmable controlled-phase (CPHASE) gate has been proposed for quantum information processing applications. This gate can introduce arbitrary phase difference to the target qubit in the case of the control...
Localization and isotropic gap formation in chip-scale Yukawa potential metastructures Sarihan, Murat Can; Gövdeli, Alperen; Lan, Zhihao; Yilmaz, Yildirim Batuhan; Erdil, Mertcan; Aras, Mehmet Sirin; Yanik, Cenk; Panoiu, Nicolae C.; Wong, Chee Wei; Kocaman, Serdar (2023-01-01) Amorphous photonic structures generated using Yukawa-potentials are examined numerically and experimentally. Unique isotropic and asymmetric bandgaps are demonstrated. Urbach band tails are analyzed to prove Anderson-like ...
A chip-scale polarization-spatial-momentum quantum SWAP gate in silicon nanophotonics Cheng, Xiang; Chang, Kai-Chi; Xie, Zhenda; Sarihan, Murat Can; Lee, Yoo Seung; Li, Yongnan; Xu, XinAn; Vinod, Abhinav Kumar; Kocaman, Serdar; Yu, Mingbin; Lo, Patrick Guo-Qiang; Kwong, Dim-Lee; Shapiro, Jeffrey H.; Wong, Franco N. C.; Wong, Chee Wei (2023-01-01) Recent progress in quantum computing and networking has enabled high-performance, large-scale quantum processors by connecting different quantum modules. Optical quantum systems show advantages in both computing and commun...
Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors Çırçır, Kübra; Kocaman, Serdar (2022-12-01) Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs photodetectors provides a lower dark current than the conventional mesa type structures. However, due to the high electric field in the passi...
Dual-band InGaAs nBn photodetectors at 2 mu m Şahin, Alper; Gül, Musa Selim; Uzgur, Fatih; Kocaman, Serdar (2022-02-01) An nBn type InGaAs photodetector structure operating at 2 mu m with dual-band operation capability has been numerically designed and experimentally characterized. A compositionally graded and unintentionally doped InGaAlAs...
A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures Şahin, Alper; Gül, Musa Selim; Uzgur, Fatih; Kocaman, Serdar (2022-01-01) In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlG...

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