HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal

Date

2017-10-23

Author

Yasar, Bengisu
Ergunt, Yasin
Kabukcuoglu, Merve Pinar
Parlak, Mehmet
Turan, Raşit
Kalay, Yunus Eren

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In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd-0.95 Zn-0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the aY<spacing diaeresis>211aY (c) direction were examined by transmission electron microscopy (TEM) and the corresponding HRTEM image simulations were performed by using a quantitative scanning TEM simulation package.

Subject Keywords

CZT, Single crystal growth, HRTEM simulation

URI

https://hdl.handle.net/11511/28434

Journal

Journal of Electronic Materials

DOI

https://doi.org/10.1007/s11664-017-5836-7

Collections

Department of Physics, Article

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Citation Formats

B. Yasar, Y. Ergunt, M. P. Kabukcuoglu, M. Parlak, R. Turan, and Y. E. Kalay, “HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal,” Journal of Electronic Materials, pp. 778–784, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28434.