Alper Şahin

E-mail

alpers@metu.edu.tr

Department

Department of Electrical and Electronics Engineering

A critical review of bioanalytical and clinical applications of solid phase microextraction Sevgen, Sılanur; Kara, Gökşin; Kir, Aysegul Seyma; Şahin, Alper; Boyacı, Ezel (2025-01-01) Studying the functions, mechanisms, and effects of drugs and other exogenous compounds on biological systems, together with investigations performed to understand biosystems better, comprises one of the most fascinating ar...
Rapid fabrication approach for active photonic devices by employing spin-on dopants Şahin, Alper; Akdeniz, Onur; Kocaman, Serdar (2024-08-01) Modulation based on the plasma dispersion effect can be achieved by controlling free carriers in the optical region with the aid of pn junction diodes. The embedded diodes are commonly realized with ion implantation, which...
Spin-on Dopant Based Fabrication Methodology of Integrated Photonic Devices Şahin, Alper; Akdeniz, Onur; Kocaman, Serdar (2024-01-01) Sparse schedules associated with ion implantation impede the development of active optical devices. This study presents a process based on spin-on dopants that allows in-house fabrication of active devices.
Dual-band InGaAs nBn photodetectors at 2 mu m Şahin, Alper; Gül, Musa Selim; Uzgur, Fatih; Kocaman, Serdar (2022-02-01) An nBn type InGaAs photodetector structure operating at 2 mu m with dual-band operation capability has been numerically designed and experimentally characterized. A compositionally graded and unintentionally doped InGaAlAs...
A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures Şahin, Alper; Gül, Musa Selim; Uzgur, Fatih; Kocaman, Serdar (2022-01-01) In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlG...
Low dark current designs for mesa type SWIR photodetectors Şahin, Alper; Kocaman, Serdar (2020-01-01) Extremely low level dark current values are required for SWIR detection during the night when there is no active illumination due to weak sources and the lack of self emission. InGaAs detectors with planar pixel structures...

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