Silicon nanocavity based light sources

Date

2011-12-01

Author

Gong, Yiyang
Ishikawa, Satoshi
Cheng, Szu-Lin
Nishi, Yoshio
Yerci, Selçuk
Li, Rui
Dal Negro, Luca
Vuckovic, Jelena

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We develop Si-based nano-photonic devices for the control of light at the nano-scales. We design high quality (Q) factor photonic crystal nanobeam cavities for a variety of Si compatible materials with low index, such as silicon rich oxide and silicon nitride, all with Q > 9,000 and small mode volumes. We apply these cavity designs to active materials such as Sinanocrystal doped silicon oxide and Er doped silicon nitride. By placing emitters in these cavities, we demonstrate that the cavity enhances emission processes. We show that the free carrier absorption process is greatly enhanced in the nanobeam cavities at both room and cryogenic temperatures. In addition, we demonstrate that nanobeam cavities made of Er-doped amorphous silicon nitride have enhanced absorption and gain characteristics compared to earlier designs that included silicon in the cavity. Because of the reduced losses, we observe linewidth narrowing and material transparency at both room temperature and cryogenic temperatures.

Subject Keywords

Photoemission, Nanostructure, Er

URI

https://hdl.handle.net/11511/30657

DOI

https://doi.org/10.1557/opl.2011.144

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

Y. Gong et al., “Silicon nanocavity based light sources,” 2011, vol. 1305, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30657.