Ozan Keysan

Department of Electrical and Electronics Engineering
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Sensitivity Analysis for the Inductance Gradient of EMFY-3 Electromagnetic Launcher
Tosun, Nail; Civil, Anil; Oruc, Ahmet Yasin; Yildirim, Baran; Ozceylan, Bekir Mert; Bolat, Bora; Yurdakul, Emre Burak; Tan, Evren; Yurdakonar, Ferhat; Akdemir, Huseyin; Gungen, Ibrahim; Onur, Ibrahim; Karagoz, Mustafa; Cavbozar, Ozgur; Demirkol, Rasih Hakan; Gocmen, Ulas; Keysan, Ozan (2022-01-01)
ASELSAN Inc. has been working on electromagnetic launch technologies since 2014. The first prototype, EMFY-1, has a 25 mm x 25 mm square bore and 3-m-length rails. The second prototype, EMFY-2, has a 50 x 50 mm square bore...
Centralized Microgrid Control System in Compliance with IEEE 2030.7 Standard Based on an Advanced Field Unit
Pouraltafi-kheljan, Soheil; Ugur, Mesut; Bozulu, Efecan; Caliskan, Bahadir Can; Keysan, Ozan; Göl, Murat (2021-11-01)
The necessity for the utilization of microgrids emerges from the integration of distributed energy resources, electric vehicles, and battery storage systems into the conventional grid structure. In order to achieve a prope...
Parallel connected GaN E-HEMT VSI-based servo drives for PMSMs
Yuruk, Huseyin; Keysan, Ozan (2021-09-01)
The operation of parallel-connected servo drives has the advantages of increasing the torque (hence the power) capacity, reliability, redundancy and modularity. However, smaller discrepancies of the system clocks of the in...
Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs
Yuruk, Huseyin; Keysan, Ozan; Ulutas, Baris (2021-07-01)
Nonlinearities in voltage source inverters (VSIs) such as; dead time, switching time, delay time, voltage drops on the power switches, parasitic capacitance, etc., are considered to be the main sources of the output voltag...
Feasibility of quasi-square-wave zero-voltage-switching bi-directional dc/dc converters with gan hemts
Karakaya, Furkan; Keysan, Ozan (2021-05-02)
There are trade-offs for each power converter design which are mainly dictated by the switching component and passive component ratings. Recent power electronic devices such as Gallium Nitride (GaN) transistors can improve...
A Comparison of Velocity Skin Effect Modeling With 2-D Transient and 3-D Quasi-Transient Finite Element Methods
Tosun, Nail; Ceylan, Doga; Polat, Hakan; Keysan, Ozan (2021-04-01)
The analysis of the velocity skin effect (VSE) in electromagnetic launchers (EMLs) requires a 3-D transient finite element method, unlike magnetic skin and proximity effects. However, VSE is dominant at high speeds, and th...
Flat winding made of aluminum or copper sheet for axial flux machines
Çakal, Gökhan; Keysan, Ozan (2021-04-01)
A novel flat winding topology has been proposed as an alternative to conventional windings with stranded round wires and other bar wound windings. The proposed winding is manufactured from thin conductor sheets by industri...
Layout Based Ultra-Fast Short-Circuit Protection Technique for Parallel Connected GaN HEMTs
Karakaya, Furkan; Keysan, Ozan (2021-01-01)
Gallium Nitride Enhancement-Mode High Electron Mobility Transistors (GaN HEMTs) help to achieve high power density converter circuits thanks to their superior efficiency, higher switching speed and small package size. Howe...
Axial flux generator with novel flat wire for direct-drive wind turbines
Çakal, Gökhan; Keysan, Ozan (2021-01-01)
With the increased demand for renewable energy resources, the direct-drive wind turbine generators have been studied intensely in the last few decades. One megawatt direct-drive axial flux permanent magnet generator is pre...
Balancing of Common DC-Bus Parallel Connected Modular Inductive Power Transfer Systems
Polat, Hakan; Ayaz, Enes; Altun, Ogün; Keysan, Ozan (2021-01-01)
The aim of this paper is to design a modular, fault tolerant multi-transmitter(Tx)/multi-receiver(Rx) parallel connected common DC bus inductive power transfer(IPT) system to replace slip rings in wind turbines or brushles...
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