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Growth and characterization of polycrystalline InSe thin films
Date
1995-03-15
Author
Parlak, Mehmet
Erçelebi, Ç.
Günal, İbrahim
SALAEVA, ZEYİT
ALLAKHVERDIEV, KERİM
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Indium selenide films were obtained by the thermal evaporation of undoped crystals at substrate temperatures of 210 and 300 IC. Films were found to exhibit n-type conductivity. Scanning electron microscopy established that the films grown on glass substrates held at 210 degrees C had an atomic content of In46.66Se53.34, whereas the films obtained under the same conditions and annealed in vacuum at 150 degrees C had an atomic content of In48.13Se51.87. X-Ray diffraction indicated that the films were polycrystalline in nature and crystallized in the D-3h(1) space group. From an analysis of Hall and conductivity measurements, performed in the temperature ranges 110-320 K and 10-320 K respectively, thermionic emission is considered to be the predominant transport mechanism above 200 K. The current transport below 75 K is due to the hopping of carriers between localized states. In the intermediate temperature region, both thermally assisted tunnelling and thermionic emission contribute to the conduction.
Subject Keywords
Conductivity
,
Electrical properties and measurements
,
Thermionic emission
,
Tunneling
URI
https://hdl.handle.net/11511/32868
Journal
Thin Solid Films
DOI
https://doi.org/10.1016/0040-6090(94)06398-2
Collections
Department of Physics, Article