Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films

Date

2019-05-01

Author

Isik, M.
Gullu, H. H.
Delice, S.
Hasanlı, Nızamı
Parlak, Mehmet

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Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550-950nm and in temperature range of 10-300K. Transmission spectra shifted towards higher wavelengths (lower energies) with increasing temperature. Transmission data were analyzed using Tauc relation and derivative spectroscopy. Analysis with Tauc relation was resulted in three different energy levels for the room temperature band gap values of material as 1.594, 1.735 and 1.830eV. The spectrum of first wavelength derivative of transmittance exhibited two maxima positions at 1.632 and 1.814eV and one minima around 1.741eV. The determined energies from both methods were in good agreement with each other. The presence of three band gap energy levels were associated to valence band splitting due to crystal-field and spin-orbit splitting. Temperature dependence of the band gap energies were also analyzed using Varshni relation and gap energy value at absolute zero and the rate of change of gap energy with temperature were determined.

Subject Keywords

Optical-properties, Buffer layer, Structural-characterization, Electrical-properties, Vapor-deposition, Solar-cells, Growth, Cdse, Absorption, Substrate

URI

https://hdl.handle.net/11511/32979

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-019-01265-5

Collections

Department of Physics, Article

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Citation Formats

M. Isik, H. H. Gullu, S. Delice, N. Hasanlı, and M. Parlak, “Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 9356–9362, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32979.