Mapping electrically active dopant profiles by field-emission scanning electron microscopy

Date

1996-09-09

Author

Turan, Raşit
Houghton, DC

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Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission scanning electron microscopy (FE-SEM). Cross-sectional FE-SEM images of boron-doped silicon heterostructures have been compared with atomic concentration and free carrier profiles measured by secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling, respectively. FE-SEM image contrast due to dopants has been shown to be electronic in origin. Since electrically active dopant species contribute solely to SE image contrast, FE-SEM can be effectively used to map electrically active dopant profiles in two dimensions with a sensitivity as low as 10(16) cm(-3). (C) 1996 American Institute of Physics.

Subject Keywords

Superlattices

URI

https://hdl.handle.net/11511/35804

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.117041

Collections

Department of Physics, Article

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Citation Formats

R. Turan and D. Houghton, “Mapping electrically active dopant profiles by field-emission scanning electron microscopy,” APPLIED PHYSICS LETTERS, pp. 1593–1595, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35804.