Temperature-tuned band gap energy and oscillator parameters of GaS0.5Se0.5 single crystals

Date

2016-01-01

Author

IŞIK, MEHMET
Tugay, Evrin
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

146
views

0
downloads

Temperature-dependent transmission and room temperature reflection measurements were carried out on GaS0.5Se0.5 single crystal in the wavelength range of 380-1000 nm to investigate its optical parameters. The analysis of the temperature-dependent absorption data showed that direct and indirect band gap energies increase from 2.36 to 2.50 eV and 2.27 to 2.40 eV, respectively, as temperature is decreased from 300 to 10 K. The rates of change of the direct and indirect band gap energies with temperature was found around -7.4 x 10(-4) eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the band gap energies were also found from the same analysis as 2.50 eV (for direct) and 2.40 eV (for indirect). Wemple-DiDomenico single effective oscillator model, Sellmeier oscillator model and Spitzer-Fan model were used for the room temperature reflection data to find optical parameters of the crystal. (C) 2016 Elsevier GmbH. All rights reserved.

Subject Keywords

Semiconductors, Optical properties, Absorption

URI

https://hdl.handle.net/11511/35986

Journal

OPTIK

DOI

https://doi.org/10.1016/j.ijleo.2016.06.041

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature-dependent optical properties of GaSe layered single crystals IŞIK, MEHMET; TUĞAY, EVRİN; Gasanly, N. M. (2016-01-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380-1100nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280K. The rate o...
Temperature-dependent optical properties of GaSe layered single crystals Hasanlı, Nızamı (2016-8-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rat...
Optical properties of TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) I. Composition- and temperature-tuned energy band gap Hasanlı, Nızamı (2010-05-28) Optical properties of the TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increasing of gallium atoms content in the TlGaxIn1-xS2 mixed crystals. From the transmission measurements carried out in the temperature range of 10-300K, the rates of change of t...
Determination of optical parameters of Ga0.75In0.25Se layered crystals IŞIK, MEHMET; Hasanlı, Nızamı (2012-05-01) The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zer...
Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals Hasanlı, Nızamı (2011-01-01) The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispe...

Citation Formats

M. IŞIK, E. Tugay, and N. Hasanlı, “Temperature-tuned band gap energy and oscillator parameters of GaS0.5Se0.5 single crystals,” OPTIK, pp. 8301–8305, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35986.