Effect of gamma-radiation on HfO2 based MOS capacitor

Date

2010-05-01

Author

Ergin, F. Belgin
Turan, Raşit
Shishiyanu, Sergiu T.
YILMAZ, ERCAN

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Radiation effects on Metal Oxide Semiconductor (MOS) capacitors with a HfO2 gate insulator have been studied. Because HfO2 is a promising high-k dielectric material for microelectronic applications, radiation effects on its performance in MOS devices is of interest. New results on radiation effects on HfO2, particularly at low gamma radiation doses, are presented. The results are compared with other systems including those of Al2O3 plus silicon based Si MOS capacitors. Both devices with different gate thicknesses were irradiated with Co-60 gamma source for varying exposure time. The midgap and flatband voltage shifts in these devices were measured and analyzed. Results show that gamma radiation does not cause significant variations in the HfO2 MOS especially at low doses.

URI

https://hdl.handle.net/11511/36250

Journal

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

DOI

https://doi.org/10.1016/j.nimb.2010.01.027

Collections

Department of Physics, Article

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Citation Formats

F. B. Ergin, R. Turan, S. T. Shishiyanu, and E. YILMAZ, “Effect of gamma-radiation on HfO2 based MOS capacitor,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, pp. 1482–1485, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36250.