Photoluminescence of layered Ga1‐xInxSe crystals at two‐photon optical excitation

Tagirov, V.I.
Hasanlı, Nızamı
Yavadov, B.M.
Sobeikh, M.A.
Salmanov, V.M.


Photoluminescence spectroscopy in the study of growth of CdSxSe1-x nanocrystals in glass
Allahverdi, C; Yukselici, MH; Turan, Raşit; Seyhan, A (IOP Publishing, 2004-08-01)
Growth of CdS0.08Se0.92 nanocrystals embedded in glass is studied through the combinative analysis of optical absorption and photoluminescence (PL) spectroscopy at room temperature. The quantum confinement effect is observed in these structures. Average nanocrystal radii are found to be in the range of 2.3-4.2 nm with the help of a quantized state effective mass theory. Photoluminescence spectra are studied by means of the model of Ravindran et al (1999 Nanostruct. Mater. 11 603). The difference between the...
Hasanlı, Nızamı; MELNIK, NN; RAGIMOV, AS (Wiley, 1983-01-01)
Measurements are made of polarized Raman scattering and infrared reflection spectra of twenty two compositions of GaS1‐xSex layer mixed crystals grown by the Bridgman method. Besides the usual one‐mode and two‐mode behaviours of phonon modes, a number of more complex dependences characterized by the appearance of additional bands in the spectra of mixed crystals are observed. Their appearance is accounted for by the uncovering of the Brillouin zone due to the disturbance of the periodicity of the crystal la...
Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire
Ghosh, Sandip; Misra, Pranob; Grahn, Holger T.; İmer, Muhsine Bilge; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S. (Wiley, 2006-06-01)
We have used polarized photoreflectance (PR) spectroscopy to study [1120]-oriented A-plane GaN films on R-plane sapphire substrates. For this type of films, the c-axis of GaN lies in the film plane. When the probe beam is polarized perpendicular to the c-axis, we observe a single feature in the PR spectrum, while two features at higher energies are observed for parallel polarization. Comparing the transition energies with the ones obtained by electronic band-structure calculations, we identify the observed ...
Optical phonons in layer TIInSe2 single crystals
Hasanlı, Nızamı; Dzhavadov, B.M.; Melnik, N.N.; Tagirov, V.I.; Vinogradov, E.A. (Wiley, 1979-01-01)
Supersonic molecular beam deposition of pentacene thin films on two Ag(111) surfaces with different step densities
Danışman, Mehmet Fatih; Scoles, G (American Physical Society (APS), 2005-08-01)
The structure of pentacene thin films grown by supersonic molecular beam deposition on two Ag(111) single-crystal surfaces with different average step distances ( similar to 400 angstrom and > 2000 angstrom) have been studied by low-energy atom diffraction. While the initial stage of the growth is similar on the two different surfaces, regardless of the pentacene kinetic energy and substrate temperature, thicker films show different structural and thermal properties. The ultrathin-film phase has the same st...
Citation Formats
V. I. Tagirov, N. Hasanlı, B. M. Yavadov, M. A. Sobeikh, and V. M. Salmanov, “Photoluminescence of layered Ga1‐xInxSe crystals at two‐photon optical excitation,” physica status solidi (a), pp. 0–0, 1978, Accessed: 00, 2020. [Online]. Available: