BRILLOUIN-SCATTERING IN TLGA(S1-XSEX)2 AND TLINXGA1-XS2 LAYER MIXED-CRYSTALS

Date

1993-01-01

Author

Hasanlı, Nızamı
LAIHO, R

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

49
views

0
downloads

Subject Keywords

General Engineering, General Physics and Astronomy

URI

https://hdl.handle.net/11511/38203

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

DOI

https://doi.org/10.7567/jjaps.32s3.541

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition İmer, Muhsine Bilge; Cravens, Michael D.; Speck, James S.; DenBaars, Steven P. (IOP Publishing, 2006-11-01) We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpola...
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique Gullu, H. H.; Terlemezoğlu, Makbule; Bayrakli, O.; Yildiz, D. E.; Parlak, Mehmet (Canadian Science Publishing, 2018-07-01) In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this stru...
Deep Traps Distribution in TlInS2 Layered Crystals IŞIK, MEHMET; Hasanlı, Nızamı; Ozkan, H. (Institute of Physics, Polish Academy of Sciences, 2009-03-01) The trap centers and distributions in TlInS2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 x 10(-16), 2.7 x 10(-12), and 1.8 x 10(-11) cm(2), respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental re...
Room temperature sub-micron magnetic imaging by scanning Hall probe microscopy SANDHU, ADARSH; MASUDA, HİROSHİ; Oral, Ahmet; BENDİNG, SİMON J (IOP Publishing, 2001-06-01) An ultra-high sensitive room temperature scanning Hall probe microscope (RT-SHPM) system incorporating a GaAs/AlGaAs micro-Hall probe was used for the direct magnetic imaging of localized magnetic field fluctuations in very close proximity to the surface of ferromagnetic materials. The active area, Hall coefficient and field sensitivity of the Hall probe were 0.8 mum x 0.8 mum, 0.3 Omega /G and 0.04G/root Hz, respectively. The use of a semiconducting Hall probe sensor enabled measurements in the presence of...
Morphological evolution of tilted grain-boundary thermal grooving by surface diffusion in bicrystal thin solid films having strong anisotropic surface Gibbs free energies Ogurtani, Tarik Omer; Akyildiz, Oncu; Oren, Ersin Emre (AIP Publishing, 2008-07-01) The variational extremum method is further extended to give the full coverage for the inclined (tilted) grain-boundary (GB) configuration with respect to the sidewalls of a bicrystal thin solid film having strong anisotropic specific surface Gibbs free energy associated with the singular directions (faceting). A set of critical computer simulation experiments is performed on the asymmetrically disposed (inclination) bicrystal thin metallic films having four- and sixfold anisotropic specific surface Gibbs fr...

Citation Formats

N. Hasanlı and R. LAIHO, “BRILLOUIN-SCATTERING IN TLGA(S1-XSEX)2 AND TLINXGA1-XS2 LAYER MIXED-CRYSTALS,” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, pp. 541–542, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38203.