ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL

1994-11-01
BULUTAY, C
GUNALP, N
Tomak, Mehmet
In the phase-coherent transport regime the possibility of a solid-state electron biprism employing an intentionally implanted impurity in a split-gate heterostructure is theoretically studied. The impurity-assisted interference phenomenon has been investigated under several impurity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quantitative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided-mode dynamics within the constriction.
JOURNAL OF APPLIED PHYSICS

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Citation Formats
C. BULUTAY, N. GUNALP, and M. Tomak, “ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL,” JOURNAL OF APPLIED PHYSICS, pp. 5309–5317, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38614.