Photoluminescence spectra of nitrogen implanted GaSe crystals

Bilir, G.
Mamedov, G. M.
Seyhan, A.
Turan, Raşit
GaSe single crystals were N-implanted along c-axis with ion beams of 10(14) and 10(16) ions/cm(2) doses having energy values of 60 and 100 keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36 meV below the direct exciton states.


Electrical properties of nitrogen implanted GaSe single crystal
KARABULUT, ORHAN; Parlak, Mehmet; Turan, Raşit; SERİNCAN, UĞUR; TAŞARKUYU, ERGÜN; Akınoğlu, Bülent Gültekin (Wiley, 2003-01-01)
N-implantation to GaSe single crystals was carried out perpendicular to c-axis with ion beam of 6x10(15) ions/cm(2) dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100-320 K. It was observed that N-implantation decreases the resistivity values down to 10(3) Omega-cm depending on the annealing temperature, from the room temperature resistivity values of as-grown samp...
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Hasanlı, Nızamı; Ozkan, H (Wiley, 2002-01-01)
Photoluminescence (PL) spectra of GaS0.75Se0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658 nm (1.884 eV, B-band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8x10(-3) to 10.7 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in ...
Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals
Isik, M.; Hadibrata, W.; Hasanlı, Nızamı (Elsevier BV, 2014-10-01)
Trapping centers in as-grown GaSe single crystals have been investigated by thermoluminescence (TL) measurements in the temperature range of 30-300 K. The analysis of the observed peaks in TL glow curve to determine the activation energies of the associated centers were accomplished using curve fitting, initial rise and peak shape methods. Activation energies of the revealed four trapping centers obtained from various methods were in good agreement with each other on the energy values of 0.14, 0.18, 0.24 an...
Thermoluminescence characteristics of Bi 12 SiO 20 single crystals
Isik, M.; SARIGÜL, NESLİHAN; Hasanlı, Nızamı (Elsevier BV, 2020-08-01)
Trapping center properties of bismuth silicon oxide (Bi12SiO20) single crystals were investigated by thermoluminescence (TL) measurements performed in the 50–400 °C temperature range. Experimental TL curve recorded at heating rate of 1 °C/s presented two overlapped peaks around 279 and 362 °C. The heating rate dependency of TL curve was also studied for heating rates between 1 and 6 °C/s. The measured TL curves were analyzed using curve fitting, initial rise and different heating rate methods. The results o...
Absorption spectrum of monomeric pseudoisocyanine: A new perspective and its implications for formation and spectral response of J-aggregates in solution and in thin films
Gulen, Demet; ÖZÇELİK, Serdar (Elsevier BV, 2008-05-01)
We argued against the current spectral assignment for absorption spectrum of monomeric PIC which is widely accepted since the pioneering works of Scheibe and Jelley [G. Scheibe, Angew. Chem. 49 (1936) 563; E.E. Jelly, Nature 138 (1936) 1009]. A new spectrum is presented along with its conceptual basis. The hypothesized spectrum attributes the previous 0-0 (approximate to 525 nm) and 0-1 (approximate to 490 nm) assignments, respectively, to intermediates acting as the precursor of J-aggregates and to the 0-0...
Citation Formats
M. A. KARABULUT, G. Bilir, G. M. Mamedov, A. Seyhan, and R. Turan, “Photoluminescence spectra of nitrogen implanted GaSe crystals,” JOURNAL OF LUMINESCENCE, pp. 1551–1555, 2008, Accessed: 00, 2020. [Online]. Available: