Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8

Isik, M.
Bulur, Enver
Hasanlı, Nızamı
Thermoluminescence measurements have been carried out on Tl4InGa3S8 single crystals in the temperature range of 10-300 K at various heating rates. The observed thermoluminescence spectra have been analyzed applying many methods like curve fitting, initial rise, peak shape and heating rate methods. Thermal cleaning method has been performed on the observed thermoluminescence glow curve to separate the overlapped peaks. Three distinctive trapping centers with activation energies of 13, 44 and 208 meV have been revealed from the results of the analysis. Heating rate dependence and traps distribution investigations have been also undertaken on the most intensive peak. The thermoluminescence mechanisms in the observed traps have been attributed to first order kinetics (slow retrapping) on the strength of the consistency between theoretical assumptions for slow retrapping process and experimental outcomes.


Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements
Delice, S.; Hasanlı, Nızamı (2014-11-01)
Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Characteristic features of thermoluminescence in neodymium-doped gallium sulfide
Güler, Işıkhan; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-06-01)
The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed ...
Thermoluminescence in gallium sulfide crystals: an unusual heating rate dependence
DELİCE, SERDAR; Bulur, Enver; Hasanlı, Nızamı (2015-03-24)
Trap centres in gallium sulfide single crystals have been investigated by thermoluminescence measurements in the temperature range of 10-230K. A curve-fitting method was utilized to evaluate the activation energies (52, 200 and 304meV) of the revealed three trap centres. The heating rate dependence and trap distribution of the peaks have been studied using experimental techniques based on various heating rates and various illumination temperatures, respectively. An anomalous heating rate dependence of the h...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals
Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25)
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements
Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01)
As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Citation Formats
S. DELİCE, M. Isik, E. Bulur, and N. Hasanlı, “Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8,” INDIAN JOURNAL OF PHYSICS, pp. 571–576, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41495.