Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8

Date

2015-06-01

Author

DELİCE, SERDAR
Isik, M.
Bulur, Enver
Hasanlı, Nızamı

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Thermoluminescence measurements have been carried out on Tl4InGa3S8 single crystals in the temperature range of 10-300 K at various heating rates. The observed thermoluminescence spectra have been analyzed applying many methods like curve fitting, initial rise, peak shape and heating rate methods. Thermal cleaning method has been performed on the observed thermoluminescence glow curve to separate the overlapped peaks. Three distinctive trapping centers with activation energies of 13, 44 and 208 meV have been revealed from the results of the analysis. Heating rate dependence and traps distribution investigations have been also undertaken on the most intensive peak. The thermoluminescence mechanisms in the observed traps have been attributed to first order kinetics (slow retrapping) on the strength of the consistency between theoretical assumptions for slow retrapping process and experimental outcomes.

Subject Keywords

Defects, Semiconductors, Thermoluminescence

URI

https://hdl.handle.net/11511/41495

Journal

INDIAN JOURNAL OF PHYSICS

DOI

https://doi.org/10.1007/s12648-014-0613-4

Collections

Department of Physics, Article

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Citation Formats

S. DELİCE, M. Isik, E. Bulur, and N. Hasanlı, “Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8,” INDIAN JOURNAL OF PHYSICS, pp. 571–576, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41495.