SHALLOW AND CHALCOGEN DOUBLE DONORS IN SILICON

1987-01-01
Tomak, Mehmet
BALASUBRAMANIAN, S
The extension of the conventional effective-mass theory for shallow donors in semiconductors is examined. The shallow-deep instability problem is studied. A better incorporation of the intervalley scattering factor is discussed. The binding energies and pressure coefficients of chalcogen donors in Si are calculated using a model impurity potential. Results are compared with experimental values and earlier theoretical estimates.
Citation Formats
M. Tomak and S. BALASUBRAMANIAN, “SHALLOW AND CHALCOGEN DOUBLE DONORS IN SILICON,” PHYSICA SCRIPTA, pp. 548–550, 1987, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42404.