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SHALLOW AND CHALCOGEN DOUBLE DONORS IN SILICON

1987-01-01
Tomak, Mehmet
BALASUBRAMANIAN, S
The extension of the conventional effective-mass theory for shallow donors in semiconductors is examined. The shallow-deep instability problem is studied. A better incorporation of the intervalley scattering factor is discussed. The binding energies and pressure coefficients of chalcogen donors in Si are calculated using a model impurity potential. Results are compared with experimental values and earlier theoretical estimates.