Energy Band Diagram And Current Transport Mechanism In p-MgO/n-Ga4Se3S

2015-01-01
QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı
A p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics.

Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Energy Band Diagram And Current Transport Mechanism In p-MgO/n-Ga4Se3S,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62, no. 1, pp. 102–106, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42424.