DAVYDOV SPLITTING AND RIGID-LAYER MODES IN INS CRYSTAL

Date

1982-01-01

Author

Hasanlı, Nızamı
RAGIMOV, AS
BURLAKOV, VM
GONCHAROV, AF
VINOGRADOV, EA

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

28
views

0
downloads

Polarized infrared reflection spectra of InS layer crystal have been measured. Both components of the Davydov doublets caused by the splitting of intralayer vibrations due to the interlayer interactions are active in i.r. spectra. Doublet frequencies have been used to calculate the rigid-layer mode frequencies which are correlated with the experimental ones. It has been established that in InS crystal the frequencies of rigid-layer modes are much higher than those of ordinary layer crystals. Atomic displacements have been found at i.r.-active normal modes.

URI

https://hdl.handle.net/11511/42867

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/0038-1098(82)90221-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optical constants of Tl4Ga3InSe8 layered single crystals Goksen, K.; Hasanlı, Nızamı (Elsevier BV, 2007-11-15) The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500-1100 run. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature i...
OPTICAL PHONONS IN GAS1-XSEX LAYER MIXED-CRYSTALS Hasanlı, Nızamı; MELNIK, NN; RAGIMOV, AS (Wiley, 1983-01-01) Measurements are made of polarized Raman scattering and infrared reflection spectra of twenty two compositions of GaS1‐xSex layer mixed crystals grown by the Bridgman method. Besides the usual one‐mode and two‐mode behaviours of phonon modes, a number of more complex dependences characterized by the appearance of additional bands in the spectra of mixed crystals are observed. Their appearance is accounted for by the uncovering of the Brillouin zone due to the disturbance of the periodicity of the crystal la...
Determination of optical parameters of Ga0.75In0.25Se layered crystals IŞIK, MEHMET; Hasanlı, Nızamı (2012-05-01) The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zer...
Optical properties of TlGaSeS layered single crystals Güler, Işıkhan; Hasanlı, Nızamı (2007-12-01) The optical properties of TlGaSeS layered single crystals have been investigated by measuring the transmissions and the reflections in the wavelength region between 400 and 1100 nm. The optical indirect transitions with a band gap energy of 2.27 eV and direct transitions with a band gap energy of 2.58 eV were found by means of the analysis of the absorption data at the room temperature. The rate of change of the indirect band gap with temperature, that is, gamma = -3.2 x 10(-4) eV/K, was determined from the...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...

Citation Formats

N. Hasanlı, A. RAGIMOV, V. BURLAKOV, A. GONCHAROV, and E. VINOGRADOV, “DAVYDOV SPLITTING AND RIGID-LAYER MODES IN INS CRYSTAL,” SOLID STATE COMMUNICATIONS, pp. 843–845, 1982, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42867.