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Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors
Date
2017-10-14
Author
Ozer, Y.
Kocaman, Serdar
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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We show suppression of generation-recombination dark current that leads to an increase in the operating temperature nearly 40K (from similar to 85K to similar to 125 K, tau(SRH) = 200 ns) with diffusion limited performance of alternative substrate multiwafer infrared HgCdTe infrared photodetectors with a cut-off wavelength of 5 mu m. Enhancement has been achieved by shifting the depletion region into an n type wide bandgap material. An in-house numerical model, which solves Poisson, continuity, and current equations for electrons and holes, is utilized for high precision in electrical and optical characterization of the detector. Composition and doping levels are optimized so that the collection of photo-generated carriers is not disturbed and the quantum efficiency is kept high. Published by AIP Publishing.
Subject Keywords
Mbe growth
,
Hot detector
,
Photodiodes
,
Performance
,
Transport
,
Semiconductors
,
Germanium
,
Electrons
,
Vision
,
Design
URI
https://hdl.handle.net/11511/44557
Journal
JOURNAL OF APPLIED PHYSICS
DOI
https://doi.org/10.1063/1.5000116
Collections
Department of Electrical and Electronics Engineering, Article