Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors

Date

2017-10-14

Author

Ozer, Y.
Kocaman, Serdar

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

38
views

0
downloads

We show suppression of generation-recombination dark current that leads to an increase in the operating temperature nearly 40K (from similar to 85K to similar to 125 K, tau(SRH) = 200 ns) with diffusion limited performance of alternative substrate multiwafer infrared HgCdTe infrared photodetectors with a cut-off wavelength of 5 mu m. Enhancement has been achieved by shifting the depletion region into an n type wide bandgap material. An in-house numerical model, which solves Poisson, continuity, and current equations for electrons and holes, is utilized for high precision in electrical and optical characterization of the detector. Composition and doping levels are optimized so that the collection of photo-generated carriers is not disturbed and the quantum efficiency is kept high. Published by AIP Publishing.

Subject Keywords

Mbe growth, Hot detector, Photodiodes, Performance, Transport, Semiconductors, Germanium, Electrons, Vision, Design

URI

https://hdl.handle.net/11511/44557

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.5000116

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals Hasanlı, Nızamı (2013-01-15) Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (2008-11-01) Ga(4)Se(3)S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 3 10 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observe...
Hopping conduction in Ga4Se3S layered single crystals Qasrawi, A.F.; Hasanlı, Nızamı (Elsevier BV, 2008-11) The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were...
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal Hasanlı, Nızamı; Aydinli, A; Baten, SMA (2000-02-01) The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomoge...
Ultra-fast charge exchange spectroscopy for turbulent ion temperature fluctuation measurements on the DIII-D tokamak (invited) Uzun Kaymak, İlker Ümit; McKee, G. R. (2012-10-01) A novel two-channel, high throughput, high efficiency spectrometer system has been developed to measure impurity ion temperature and toroidal velocity fluctuations associated with long-wavelength turbulence and other plasma instabilities. The spectrometer observes the emission of the n = 8-7 hydrogenic transition of C+5 ions (lambda(air) = 529.06 nm) resulting from charge exchange reactions between deuterium heating beams and intrinsic carbon. Novel features include a large, prism-coupled high-dispersion, v...

Citation Formats

Y. Ozer and S. Kocaman, “Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors,” JOURNAL OF APPLIED PHYSICS, pp. 0–0, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44557.