Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors

Date

2017-10-14

Author

Ozer, Y.
Kocaman, Serdar

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We show suppression of generation-recombination dark current that leads to an increase in the operating temperature nearly 40K (from similar to 85K to similar to 125 K, tau(SRH) = 200 ns) with diffusion limited performance of alternative substrate multiwafer infrared HgCdTe infrared photodetectors with a cut-off wavelength of 5 mu m. Enhancement has been achieved by shifting the depletion region into an n type wide bandgap material. An in-house numerical model, which solves Poisson, continuity, and current equations for electrons and holes, is utilized for high precision in electrical and optical characterization of the detector. Composition and doping levels are optimized so that the collection of photo-generated carriers is not disturbed and the quantum efficiency is kept high. Published by AIP Publishing.

Subject Keywords

Mbe growth, Hot detector, Photodiodes, Performance, Transport, Semiconductors, Germanium, Electrons, Vision, Design

URI

https://hdl.handle.net/11511/44557

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.5000116

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

Y. Ozer and S. Kocaman, “Generation recombination suppression via depletion engineered heterojunction for alternative substrate MWIR HgCdTe infrared photodetectors,” JOURNAL OF APPLIED PHYSICS, pp. 0–0, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44557.