The electronic band structure of InN, InAs and InSb compounds

Date

2008-04-01

Author

Mohammad, Rezek
Katırcıoğlu, Şenay
El-Hasan, Musa

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The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials

URI

https://hdl.handle.net/11511/44863

Journal

JOURNAL OF MATERIALS SCIENCE

DOI

https://doi.org/10.1007/s10853-007-1794-4

Collections

Department of Physics, Article

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Citation Formats

R. Mohammad, Ş. Katırcıoğlu, and M. El-Hasan, “The electronic band structure of InN, InAs and InSb compounds,” JOURNAL OF MATERIALS SCIENCE, pp. 2935–2946, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44863.