Graphene/SrTiO3 hetero interface studied by X-ray photoelectron spectroscopy

Date

2016-08-01

Author

KARAMAT, SHUMAİLA
KE, C
Inkaya, U. Y.
AKRAM, Rizwan
Yıldız, İlker
Zaman, S. Shah
Oral, Ahmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

19
views

16
downloads

Cite This

The present paper focuses on study of graphene and strontium titanate (SrTiO3 or STO) interface. An ambient pressure chemical vapour deposition (AP-CVD) setup is used to grow graphene on STO (110) substrates in the presence of methane, argon and hydrogen gases at 1000 degrees C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates. X-ray photoelectron spectroscopy (XPS) is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset (VBO) and conduction band offset (CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC (arranging pattern of carbon layers) stacked graphene layers. (C) 2016 Chinese Materials Research Society. Production and hosting by Elsevier B.V.

Subject Keywords

General Materials Science, Chemical vapour deposition, X-ray photoelectron spectroscopy, Raman spectroscopy, Graphene, Valence band maximum

URI

https://hdl.handle.net/11511/47257

Collections

Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article