Synthesis and temperature-tuned band gap characteristics of magnetron sputtered ZnTe thin films

Date

2020-04-01

Author

Isik, M.
Gullu, H. H.
Parlak, Mehmet
Hasanlı, Nızamı

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Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectronic devices. The usage of ZnTe in optoelectronic applications directs researchers to search its optical characteristics in great detail. For this purpose, structural and optical properties of magnetron sputtered ZnTe thin films were studied by means of x-ray diffraction and transmission spectroscopy measurements. Structural analyses indicated that ZnTe thin films having cubic crystalline structure were successfully grown on soda-lime glass substrates. Transmittance spectra in the 400-1000 nm were recorded in between 10 and 300 K temperature region. The analyses of absorption coefficient spectra resulted in band gap energies decreasing from around 2.31 (10 K) to 2.26 eV (300 K). Temperature dependency of gap energy was studied by Varshni and O'Donnell-Chen relations to determine various optical parameters like absolute zero temperature band gap energy, change of gap energy with temperature, phonon energy.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/48859

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2019.411968

Collections

Department of Physics, Article

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Citation Formats

M. Isik, H. H. Gullu, M. Parlak, and N. Hasanlı, “Synthesis and temperature-tuned band gap characteristics of magnetron sputtered ZnTe thin films,” PHYSICA B-CONDENSED MATTER, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48859.