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Synthesis and temperature-tuned band gap characteristics of magnetron sputtered ZnTe thin films
Date
2020-04-01
Author
Isik, M.
Gullu, H. H.
Parlak, Mehmet
Hasanlı, Nızamı
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectronic devices. The usage of ZnTe in optoelectronic applications directs researchers to search its optical characteristics in great detail. For this purpose, structural and optical properties of magnetron sputtered ZnTe thin films were studied by means of x-ray diffraction and transmission spectroscopy measurements. Structural analyses indicated that ZnTe thin films having cubic crystalline structure were successfully grown on soda-lime glass substrates. Transmittance spectra in the 400-1000 nm were recorded in between 10 and 300 K temperature region. The analyses of absorption coefficient spectra resulted in band gap energies decreasing from around 2.31 (10 K) to 2.26 eV (300 K). Temperature dependency of gap energy was studied by Varshni and O'Donnell-Chen relations to determine various optical parameters like absolute zero temperature band gap energy, change of gap energy with temperature, phonon energy.
Subject Keywords
Electrical and Electronic Engineering
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/48859
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2019.411968
Collections
Department of Physics, Article