AgInSe2 ve AgGaSe2 ince filmlerin ısısal buharlaştırma ve saçtırmalı kaplama teknikleriyle büyütülmesi ve n-CdS/p-AgGaSe2, p-Si/nAgInSe2 ve n-CdS/p-AgInSe2 pn-heteroeklem güneş hücrelerinin oluşturulması

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2011

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Erçelebi, Çiğdem A.
Parlak, Mehmet
Kaleli, Murat
Karaağaç, Hakan

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Bu proje kapsamında, I-III-VI gurubu kalkopirit bileĢiklerinden olan AgInSe2 (AIS) ve AgGaSe2 (AGS) ince filmler üç farklı kaplama, ısısal (thermal), elektron demeti(e-beam) ve DC/RF manyetik saçtırmalı (sputtering) buharlaştırma yöntemleri kullanılarak üretilmiştir. Projenin ilk aşamasında, cam tabanlar üzerinde kaplanan filmlerin elektriksel, optik, yapısal ve yüzeysel özellikleri XRD, SEM, EDS ve XPS ölçümleri alınarak belirlenmiş ve büyütme koşulları optimize edilmiştir. Isısal ve elektron demeti yöntemiyle kaplama için, buharlaştırmada kullanılacak kaynak malzeme saf Ag, In, Ga ve Se elementleri istenilen oranda kuvartz tüpler içerisine istenen içerikte yerleştirilip, vakumlanarak Bridgman kristal çekme sistemiyle AgInSe2 ve AgGaSe2 kristalleri sentezlenmiş ve buharlaştırma kaynağı olarak kullanılmıştır. Üçüncü olarak ise daha önce çok fazla uygulanmamış olan, RF/DC manyetik saçtırma tekniğiyle, AgInSe2 ve AgGaSe2 ince fılmler katmanlar halinde farklı kalınlıklarda, aynı vakum ortamında, vakumu bozmadan üç kaynaklı saçtırmalı buharlaştırma sistemi kullanılarak, farklı alttaşlar üzerine katmanlar halinde Ag/InSe/Ag... kaplanmış, sonrasında üçlü bileşik yapısının oluşması için filmlerin 200-500 oC derece arasında tavlanmıştır. Ayrıca kaplama ve tavlama sırasında yapı içerisindeki Se ayrışmasını ortadan kaldırmak için baĢka bir sistemde selenyum atmosferinde 300-500 oC‟de, 30 dakika tavlanmıştır. Çalışmanın takip eden son aşamasında her üç yöntemle hazırlanan ince filmler kullanılarak; Mo/p-AgInSe2, p-Si/n-AgInSe2, n-CdS/p-AgInSe2, Mo/n-AgGaSe2/p-AgInSe2, gibi farklı pn-heteroeklem ve metal/yarıiletken aygıt yapıları oluşturularak, karanlık ve aydınlık akım-voltaj (I-V), farklı frekanslarda kapasitans-voltaj(C-V) ve 400-1200 nm arasında spektral fotoakım ölçümleri alınarak aygıt parametreleri tespit edilmiştir. Ayrıca güneş benzeticisi kullanılarak AM1 şartlarında verimlilikleri ölçülmüştür.

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https://app.trdizin.gov.tr/publication/project/detail/TVRFMU9USXk
https://hdl.handle.net/11511/49617

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Department of Physics, Project and Design

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Citation Formats

Ç. A. Erçelebi, M. Parlak, M. Kaleli, and H. Karaağaç, “AgInSe2 ve AgGaSe2 ince filmlerin ısısal buharlaştırma ve saçtırmalı kaplama teknikleriyle büyütülmesi ve n-CdS/p-AgGaSe2, p-Si/nAgInSe2 ve n-CdS/p-AgInSe2 pn-heteroeklem güneş hücrelerinin oluşturulması,” 2011. Accessed: 00, 2020. [Online]. Available: https://app.trdizin.gov.tr/publication/project/detail/TVRFMU9USXk.