Electronic-structure of strained sin/gen(001) superlattices

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1988-03-01
Çıracı, Salim
Gülseren, Oğuz
Ellialtıoğlu, Süleyman Şinasi
Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit.

Citation Formats
S. Çıracı, O. Gülseren, and S. Ş. Ellialtıoğlu, “Electronic-structure of strained sin/gen(001) superlattices,” SOLID STATE COMMUNICATIONS, vol. 65, no. 11, pp. 1285–1290, 1988, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49799.