Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Electronic-structure of strained sin/gen(001) superlattices
Download
index.pdf
Date
1988-03-01
Author
Çıracı, Salim
Gülseren, Oğuz
Ellialtıoğlu, Süleyman Şinasi
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
40
views
0
downloads
Cite This
Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit.
URI
https://hdl.handle.net/11511/49799
Journal
SOLID STATE COMMUNICATIONS
DOI
https://doi.org/10.1016/0038-1098(88)90078-6
Collections
Graduate School of Natural and Applied Sciences, Article
Suggestions
OpenMETU
Core
Electronic band structure of stepped Si(100) surfaces
Salman, SA; Katırcıoğlu, Şenay; Erkoc, S (2001-02-01)
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.
Electronic, elastic and optical properties on the Zn1-xMgxSe mixed alloys
Sürücü, Gökhan; Colakoglu, K.; Deligoz, E.; ÇİFTCİ, YASEMİN; Korozlu, N. (2011-02-01)
The structural, elastic, electronic and optical properties of Zn1-xMgxSe ternary mixed crystals are investigated by utilizing the first-principles plane-wave pseudopotential method within the LDA approximations. Some basic physical properties, such as lattice constant, bulk modulus, second-order elastic constants (C-ij), Shear modulus, Young's modulus, Poison's ratio, Lame constants and the electronic band structures, are calculated. We have, also, predicted the optical properties such as dielectric functio...
Scattering of He from a Cu(110) surface
Özder, Serhat; Erkoç, Şakir (Elsevier BV, 1987-4)
Using the close-coupling method we have investigated the diffraction of He atoms from a Cu ( 110 ) surface. Interaction between He and the copper surface is represented by a corrugated Mie-type potential. The softness parameter β is “optimized” for a given incident energy (Ei) and incident angle (θi) so as to reproduce the experimental results. An empirical expression for the softness parameter β(Ei, θi) is obtained. Our results are in good agreement with previous calculations and experimental observations.
Adsorption of oxygen and hydrogen on stepped Si(100) surface
Salman, SA; Katırcıoğlu, Şenay (1999-06-01)
We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.
Determining the Elastic Properties of Modified Polystyrenes by Sound Velocity Measurements
Oral, Imran; Guzel, Hatice; Ahmetli, Gulnare; Gür, Cemil Hakan (Wiley, 2011-09-15)
The effect of the binding of various polyfunctional groups to polystyrene's (PS's) aromatic ring on the elastic properties of the PS were investigated by an ultrasonic method. Various sets of samples were prepared by chemical modification of pure PSs having different molecular weights with SA, maleic anhydride, and phthalic anhydride. The ultrasonic wave velocities of modified PSs were measured with the pulse-echo method at room temperature by a computer-controlled analyzer and a digital oscilloscope. The v...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Çıracı, O. Gülseren, and S. Ş. Ellialtıoğlu, “Electronic-structure of strained sin/gen(001) superlattices,”
SOLID STATE COMMUNICATIONS
, pp. 1285–1290, 1988, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49799.