Electrical and photovoltaic characterization of nCdS:In/Si heterojunction devices

Date

1989-9

Author

Çiǧdem, Erçelebi
Murat, Bayhan

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A variety of CdS/Si heterojunction solar cells have been prepared by the vacuum evaporation of indium-doped CdS films onto single-crystal p-Si substrates. Electrical and photovoltaic properties have been studied together with the influence of the back-surface field and the post-annealing process on the efficiency. Dark measurements of the voltage and of the temperature dependence of the current and the capacitance indicate that the forward current transport is predominantly characterized by a multistep tunnelling-recombination mechanism with a temperature-dependent built-in potential which decreases with increasing temperature. The validity of such a current conduction mechanism has been tested with further measurements performed under illumination

Subject Keywords

General Engineering, Energy & Fuels

URI

https://hdl.handle.net/11511/52201

Journal

Solar Cells

DOI

https://doi.org/10.1016/0379-6787(89)90085-9

Collections

Department of Physics, Article

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Citation Formats

E. Çiǧdem and B. Murat, “Electrical and photovoltaic characterization of nCdS:In/Si heterojunction devices,” Solar Cells, pp. 253–262, 1989, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/52201.