Structural, electrical and photo-hall characterization of InSe : Cd and InSe thin films

Structural and optical properties of thermally evaporated Ga-In-Se thin films IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30) In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Structural and optical characteristics of thermally evaporated TlGaSe2 thin films Isik, M.; KARATAY, AHMET; Hasanlı, Nızamı (2022-02-01) The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope...
Mechanism and characterization studies on boron carbides deposited by chemical vapor deposition technique Karaman, Mustafa; Özbelge, Hilmi Önder; Sezgi, Naime Aslı; Doğu, Timur (2005-12-02) Boron carbide was produced in an impinging jet CVD reactor from a gas mixture of BCl3, CH4 and H-2. The mass transfer limitations on the reaction kinetics were minimised by the jet impingement on the substrate surface. XPS characterization of the produced deposits revealed a nearly pure boron carbide phase containing small amounts of oxy-boron and oxy-carbon species. After a detailed kinetic study, a reaction model was proposed to predict the rates of boron carbide and dichloroborane formation reactions. In...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films Gullu, H. H.; Parlak, Mehmet (2016-05-01) In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Structural, optical and electrical characterization of CDSEXTE1-X thin films Demir, Merve; Parlak, Mehmet; Department of Physics (2020) The aim of this study is to investigate the structural, optical and electrical properties of ternary CdSexTe1-x thin films. CdTe and CdSe thin films are being used in solar cells due to their favorable direct band gaps of 1.5eV and 1.7eV, respectively. Moreover, having high absorption coefficients provide an important role to CdTe and CdSe films as an absorber layer. Therefore, by mixing these two films, properties of resultant ternary CdSexTe1-x alloy can be optimized for solar cell applications. Chemical ...

Citation Formats

A. F. Qasrawi, “Structural, electrical and photo-hall characterization of InSe : Cd and InSe thin films,” Ph.D. - Doctoral Program, Middle East Technical University, 2000.