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Investigation of Turn-on and Turn-off Characteristics
Date
2018-09-21
Author
Karakaya, Furkan
Ugur, Mesut
Keysan, Ozan
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.
Subject Keywords
"Gallium Nitride (GaN)"
,
"Wide bandgap devices"
,
"Device characterisation "
,
"Device modeling"
,
"Device simulation"
URI
https://hdl.handle.net/11511/54489
Collections
Department of Electrical and Electronics Engineering, Conference / Seminar
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BibTeX
F. Karakaya, M. Ugur, and O. Keysan, “Investigation of Turn-on and Turn-off Characteristics,” presented at the 20th European Conference on Power Electronics and Applications (EPE ECCE Europe), Riga, LATVIA, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/54489.
