Investigation of Turn-on and Turn-off Characteristics

Date

2018-09-21

Author

Karakaya, Furkan
Ugur, Mesut
Keysan, Ozan

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In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.

Subject Keywords

"Gallium Nitride (GaN)", "Wide bandgap devices", "Device characterisation ", "Device modeling", "Device simulation"

URI

https://hdl.handle.net/11511/54489

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Department of Electrical and Electronics Engineering, Conference / Seminar