Hasanlı, Nızamı


Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide
Gunduz, Deniz Cihan; Tankut, Aydin; Sedani, Salar; Karaman, Mehmet; Turan, Raşit (2015-04-29)
In this work, silicon oxide thin films were synthesized via e-beam evaporation of silicon monoxide. Subsequent annealing experiments were carried out to induce Si nanocrystals (Si NCs) formation. A broad range of annealing durations and temperatures were studied. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR) were employed to study the mechanism of phase separation in silicon oxide films and crystallization of Si. Raman spectroscopy results show...
Defect luminescence in undoped p-type GaSe
Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01)
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Critical behaviour of Raman frequency shifts for translational modes near the melting point of ammonia solid I based on Pippard relations
Yurtseven, Hasan Hamit (Informa UK Limited, 2005-09-01)
A correlation between thermal expansivity alpha(p) and frequency shifts (1/nu)(partial derivative nu/partial derivative P)(T) was established for the ammonia solid I near its melting point. For this correlation, calculated frequencies for the translational modes of nu(T) (100 cm(-1)) and nu(T) (130 cm(-1)) were used to acquire the Raman frequency shifts at pressures of 0, 1.93 and 3.07 kbar in ammonia solid I. In this crystalline system, values of the slope dP(m)= dT were deduced for the fixed pressures fro...
Adsorption of Te on Ge(001): Density-functional calculations
Cakmak, M; Srivastava, GP; Ellialtıoğlu, Süleyman Şinasi (American Physical Society (APS), 2003-05-15)
We present ab initio density-functional calculations for the adsorption of Te on the Ge(001) surface. Various possible adsorption geometries for the 0.5-, 0.8-, 1-, and 2-ML (monolayer) coverages of Te have been investigated. Our results for sub-monolayer coverages confirm earlier results as well as provide some new insight into the adsorption of Te. Furthermore, our results for the 2-ML coverage of Te suggest that the bonding between the overlayer and the substrate has changed significantly. This may provi...
Structural stability and energetics of single-walled carbon nanotubes under uniaxial strain
Dereli, G; Ozdogan, C (American Physical Society (APS), 2003-01-15)
A (10x10) single-walled carbon nanotube consisting of 400 atoms with 20 layers is simulated under tensile loading using our developed O(N) parallel tight-binding molecular-dynamics algorithms. It is observed that the simulated carbon nanotube is able to carry the strain up to 122% of the relaxed tube length in elongation and up to 93% for compression. Young's modulus, tensile strength, and the Poisson ratio are calculated and the values found are 0.311 TPa, 4.92 GPa, and 0.287, respectively. The stress-stra...
Citation Formats
L. MUSAEVA, M. KHOMUTOVA, and N. Hasanlı, “VIBRATIONAL-SPECTRA OF GA2SE3, GA2S3 AND SOLID-SOLUTIONS ON ITS BASE,” FIZIKA TVERDOGO TELA, pp. 1766–1770, 1977, Accessed: 00, 2020. [Online]. Available: