RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE

1993-08-01
ALLAHVERDI, K
BABAEV, S
Ellialtıoğlu, Süleyman Şinasi
ISMAILOV, A
Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.

Citation Formats
K. ALLAHVERDI, S. BABAEV, S. Ş. Ellialtıoğlu, and A. ISMAILOV, “RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE,” SOLID STATE COMMUNICATIONS, vol. 87, no. 8, pp. 675–678, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/56725.