RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE

Date

1993-08-01

Author

ALLAHVERDI, K
BABAEV, S
Ellialtıoğlu, Süleyman Şinasi
ISMAILOV, A

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

11
views

0
downloads

Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.

Subject Keywords

Inse, Gase

URI

https://hdl.handle.net/11511/56725

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/0038-1098(93)90204-z

Collections

Graduate School of Natural and Applied Sciences, Article

Citation Formats

K. ALLAHVERDI, S. BABAEV, S. Ş. Ellialtıoğlu, and A. ISMAILOV, “RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE,” SOLID STATE COMMUNICATIONS, vol. 87, no. 8, pp. 675–678, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/56725.