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RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE
Date
1993-08-01
Author
ALLAHVERDI, K
BABAEV, S
Ellialtıoğlu, Süleyman Şinasi
ISMAILOV, A
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.
Subject Keywords
Inse
,
Gase
URI
https://hdl.handle.net/11511/56725
Journal
SOLID STATE COMMUNICATIONS
DOI
https://doi.org/10.1016/0038-1098(93)90204-z
Collections
Graduate School of Natural and Applied Sciences, Article